Datasheet > TUMH1N

TUMH1N

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	259K
描述
50V,30mA,NPN Bipolar Digital Transistor

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TUMH1N 数据手册

Product Specification

General purpose (dual digital transistors)

TUMH1N

FEATURES



Two DTC124Es chips in SOT-363 package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

Halogen free

Qualified to AEC-Q101 standards for high reliability

SOT-363

APPLICATIONS



Dual NPN small signal surface mount transistor.

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-363

TUMH1N

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Supply Voltage

V_CC

V_IN

Input Voltage

-10 to +40

Output Current

I_O

100

℃

Collector Current

I_C(MAX.)

P_c

Power Dissipation

Junction and Storage Temperature

150

T_J,T_STG

-55 to +150

DTM0048A

www.gmesemi.com

12 3 4

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