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TUMH15N PDF预览

TUMH15N

更新时间: 2024-04-09 19:02:14
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 389K
描述
50V,100mA,NPN Bipolar Digital Transistor

TUMH15N 数据手册

 浏览型号TUMH15N的Datasheet PDF文件第2页浏览型号TUMH15N的Datasheet PDF文件第3页浏览型号TUMH15N的Datasheet PDF文件第4页 
Digital Transistor  
TUMH15N  
Features  
Two DTC143E transistors are built-in a package  
Built-in biasing resistors (R1: 4.7, R2: 4.7)  
Transistor elements are independent, eliminating interference  
Mounting cost and area can be cut in half  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: SOT-363  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
SOT-363  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
TUMH15N  
SOT-363  
3000 pcs / Tape & Reel  
H2  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
VCC  
VI  
Collector-Base Voltage  
50  
50  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Supply Voltage  
5
V
50  
V
Input Voltage  
-10 to +30  
100  
V
IO  
Output Current  
mA  
mA  
IC(Max)  
Collector Current  
100  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation *1  
PD  
RθJA  
TJ  
300  
mW  
/W  
°C  
Thermal Resistance, Junction to Ambient Air  
Operating Junction Temperature Range  
Storage Temperature Range  
417  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
Note 1: Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint  
DTM0127A: August 2023 [2.0]  
www.gmesemi.com  
1

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