Datasheet > TUMH13N

TUMH13N

更新时间： 2024-04-09 18:59:41

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	307K
描述
50V,100mA,NPN Bipolar Digital Transistor

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TUMH13N 数据手册

Digital Transistor

TUMH13N

Features



Two DTC143Z transistors are built-in a package

Built-in biasing resistors (R₁: 4.7kΩ, R₂: 47kΩ)

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TUMH13N

SOT-363

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

V_CC

V_I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Supply Voltage

Input Voltage

-5 to +30

100

I_O

Output Current

I_C(Max)

Collector Current

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation ^*1

P_D

R_θJA

T_J

300

℃/W

°C

Thermal Resistance, Junction to Ambient Air

Operating Junction Temperature Range

Storage Temperature Range

417

-55 ~ +150

T_STG

°C

Note 1: Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint

DTM0088A: January 2024 [2.0]

www.gmesemi.com

12 3 4

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