Datasheet > TUMH11N

TUMH11N

更新时间： 2024-04-09 18:59:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	390K
描述
50V,50mA,NPN Bipolar Digital Transistor

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数据手册

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TUMH11N 数据手册

Dual Digital Transistors

TUMH11N

Features



Two DTC114E transistors are built-in a package

Epitaxial planar die construction

Built-in biasing resistors (R₁: 10kΩ, R₂: 10kΩ)

Also available in lead free version

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TUMH11N

SOT-363

3000 pcs / Tape & Reel

H11

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Value

Parameter

Symbol

Unit

TR1

TR2

Supply Voltage

Input Voltage

V_CC

V_IN

-10 to +40

Output Current

Collector Current

I_O

I_C(Max)

100

Thermal Characteristics

Parameter

Symbol

Value

150

Unit

Power Dissipation

P_D

T_J

°C

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

DTM0053A: July 2023 [2.0]

www.gmesemi.com

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