Datasheet > TUMG9N

TUMG9N

更新时间： 2024-04-09 19:01:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	308K
描述
50V,100mA,NPN Bipolar Digital Transistor

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TUMG9N 数据手册

Dual Digital Transistor

TUMG9N

Features



Two DTC114E Transistors in a package

Built-in biasing resistors (R₁: 10kΩ, R₂: 10kΩ)

Reduces component count

Surface mount package suited for automated assembly

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case : SOT-353

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-353

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TUMG9N

SOT-353

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Supply Voltage

Input Voltage

V_CC

V_IN

-10 to +40

Output Current

Collector Current

I_O

I_{C (Max.)}

100

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

T_J

150

°C

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

DTM0237A: October 2023 [2.0]

www.gmesemi.com

12 3 4

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