Datasheet > TUMG8N

TUMG8N

更新时间： 2024-04-09 18:59:28

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	333K
描述
50V,100mA,NPN Bipolar Digital Transistor

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TUMG8N 数据手册

Digital Transistor

TUMG8N

Features



Epitaxial planar die construction

Mounting cost and area can be cut in half

Built-in biasing resistors, R1≠R2

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case : SOT-353

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-353

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TUMG8N

SOT-353

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

V_CC

V_IN

Supply Voltage

Input Voltage

Output Current

-5 to +30

100

I_O

I_C(Max.)

100

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

T_J

150

°C

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

DTM0073A: August 2021

www.gmesemi.com

12 3 4

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