Datasheet > TUMD3N

TUMD3N

更新时间： 2024-09-28 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	311K
描述
50V,100mA,NPN Bipolar Digital Transistor 50V,100mA,PNP Bipolar Digital Transistor

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TUMD3N 数据手册

Dual Digital Transistor

TUMD3N

Features



Both the DTA114E and DTC114E transistor in SOT-363 Package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TUMD3N

SOT-363

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Value

Parameter

Symbol

Unit

DTr1

DTr2

-50

Supply Voltage

Input Voltage

V_CC

V_I

-10 ~ +40

10 ~ -40

-50

Output Current

Collector Current

I_O

I_C(Max)

100

-100

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation

P_D

R_θJA

R_θJC

R_θJL

T_J

150

495

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature Range

Storage Temperature Range

296

357

-55 ~ +150

T_STG

°C

Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B

DTM0043A: November 2023 [2.0]

www.gmesemi.com

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