Datasheet > TTK8205A

TTK8205A

更新时间： 2024-03-03 10:11:07

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
8页	675K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTK8205A 数据手册

TTK8205A,TTX8205AF

Wuxi Unigroup Microelectronics CO.,LTD.

20V N-Channel Trench MOSFET(Preliminary)



General Description

Product Summary

 Trench Power technology

 Low R_DS(ON)

V_DS

20V

I_D(at V_GS=10V)

 Low Gate Charge

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

< 20.5mΩ

< 25mΩ

< 31.5mΩ

 Optimized for fast-switching applications

Applications

100% UIS Tested

 Synchronous Rectification in DC/DC and AC/DC Converters

 Isolated DC/DC Converters in Telecom and Industrial

TSSOP-8

SOT23-6

Part Number

Package Type

Form

Marking

TTK8205

TSSOP-8

SOT23-6

Tape&Reel

8205A

TTX8205AF

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±10

T_C=25ºC

T_C=70ºC

Continuous Drain Current

I_D

Pulsed Drain Current

I_DM

I_AS

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

T_C=25ºC

T_C=70ºC

E_AS

7.4

ºC

1.5

Power Dissipation

P_D

0.96

-55 to 150

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

T_J, T_STG

Symbol

R_ƟJC

Maximum

14.4

Units

ºC /W

Maximum Junction-to-Case

Steady-State

Maximum Junction-to-Ambient

R_ƟJA

100

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7 8

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