Datasheet > TTD95N68A

TTD95N68A

更新时间： 2024-04-09 18:59:43

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
11页	700K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTD95N68A 数据手册

TTD95N68A,TTU95N68A

Wuxi Unigroup Microelectronics CO.,LTD.

68V N-Channel Trench MOSFET(Preliminary)

Product Summary

General Description

 Trench Power Technology

 Low R_DS(ON)

VDS

68V

95A

I_D(at V_GS=10V)

 Low Gate Charge

 Optimized for Fast-switching Applications`

R_DS(ON)(at V_GS=10V)

< 7.5mΩ

Applications

100% UIS Tested

 Synchronous Rectification in DC/DC and AC/DC Converters

 Isolated DC/DC Converters in Telecom and Industrial

TO-252

TO-251

Device

Package

Form

Marking

TTD95N68A

TTU95N68A

TO-252

TO-251

Tape&Reel

95N68A

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_C= 25ºC

Continuous Drain Current

I_D

T_C= 100ºC

Pulsed Drain Current

I_DM

I_AS

285

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

E_AS

380

T_C= 25ºC

130.5

65.5

Power Dissipation

P_D

T_C= 100ºC

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

ºC

Thermal Characteristics

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Case

Steady-State

R_thJC

R_thJA

1.15

100

ºC /W

Maximum Junction-to-Ambient

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7...11

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