Datasheet > TTC3710B

TTC3710B

更新时间： 2023-12-20 18:46:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	250K
描述
NPN Bipolar Transistor, 80 V, 12 A, TO-220SIS

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TTC3710B 数据手册

TTC3710B

Bipolar Transistors Silicon NPN Epitaxial Type

TTC3710B

1. Applications

•

High-Current Switching

2. Features

(1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A)

(2) High speed switching: tstg = 1 µs (typ.)

(3) Complementary to TTA1452B

3. Packaging and Internal Circuit

1. Base

2. Collector

3. Emitter

TO-220SIS

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCEO

VEBO

(Note 1)

ICP

Collector power dissipation

Junction temperature

Storage temperature

Mounting torque

(Tc = 25 )

150



Tstg

TOR

-55 to 150

0.6

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 .

Start of commercial production

2012-09

2014-11-06

Rev.3.0

12 3 4 5 6 7

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