Datasheet > TTC1949

TTC1949

更新时间： 2023-12-20 18:45:29

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	199K
描述
NPN Bipolar Transistor, 50 V, 0.5 A, SOT-346(S-Mini)

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TTC1949 数据手册

TTC1949

Bipolar Transistors Silicon NPN Epitaxial Type

TTC1949

1. Applications

•

Low-Frequency Power Amplifiers

2. Packaging and Internal Circuit

1. Base

2. Emitter

3. Collector

S-Mini

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

500



Base current

Collector power dissipation

Junction temperature

Storage temperature

(Note 1)

200

150

Tstg

- 55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 × 3)

Start of commercial production

2017-06

Toshiba Electronic Devices & Storage Corporation

2018-05-28

Rev.1.0

12 3 4 5

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