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TT210N18KOF

更新时间: 2024-10-28 05:20:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅极
页数 文件大小 规格书
13页 415K
描述
Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, MODULE-7

TT210N18KOF 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:MODULE包装说明:FLANGE MOUNT, R-XUFM-X7
针数:7Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.19
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流:200 mA
最大直流栅极触发电压:2 V快速连接描述:2G-2GR
螺丝端子的描述:A-K-AK最大维持电流:300 mA
JESD-30 代码:R-XUFM-X7最大漏电流:50 mA
湿度敏感等级:1通态非重复峰值电流:5800 A
元件数量:2端子数量:7
最大通态电流:210000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:410 A断态重复峰值电压:1800 V
重复峰值反向电压:1800 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

TT210N18KOF 数据手册

 浏览型号TT210N18KOF的Datasheet PDF文件第2页浏览型号TT210N18KOF的Datasheet PDF文件第3页浏览型号TT210N18KOF的Datasheet PDF文件第4页浏览型号TT210N18KOF的Datasheet PDF文件第5页浏览型号TT210N18KOF的Datasheet PDF文件第6页浏览型号TT210N18KOF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Thyristor-Modul  
TT210N  
Phase Control Thyristor Module  
TT210N  
TD210N  
DT210N  
TD210N...-A  
TD210N...-K  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
1200  
1600  
1400 V  
VDRM,VRRM  
1800 V  
1200  
1600  
1400 V  
1800 V  
Vorwärts-Stoßspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
1300  
1700  
1500 V  
1900 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
410 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
210 A  
261 A  
TC = 85°C  
TC = 73°C  
6600 A  
5800 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
218000 A²s  
168000 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 747-6  
150 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs  
critical rate of rise of on-state current  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
6.Kennbuchstabe / 6th letter F  
1000 V/µs  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
max.  
1,65 V  
1 V  
Tvj = Tvj max , iT = 700 A  
Tvj = Tvj max  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Zündstrom  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
V(TO)  
rT  
0,85 mΩ  
200 mA  
2 V  
Tvj = Tvj max  
max.  
max.  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
max.  
Tvj = Tvj max , vD = 6 V  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = Tvj max , vD = 0,5 VDRM  
10 mA  
5 mA  
0,2 V  
max.  
Haltestrom  
holding current  
Einraststrom  
latching current  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
max.  
300 mA  
IL  
max. 1200 mA  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Zündverzug  
gate controlled delay time  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
50 mA  
3 µs  
vD = VDRM, vR = VRRM  
DIN IEC 747-6  
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/µs  
C.Drilling  
date of publication: 03.04.02  
prepared by:  
revision:  
1
approved by: J. Novotny  
BIP AC / Warstein,den 03.04.85 Bösterling  
A4 /82  
1/12  
Seite/page  

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