Datasheet > TSU60R2K3S1

TSU60R2K3S1

更新时间： 2024-11-02 17:15:23

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
9页	622K
描述
TO-251

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TSU60R2K3S1 数据手册

TSD60R2K3S1/TSU60R2K3S1

600V 2.3A N-Channel SJ-MOSFET

General Description

Features

Truesemi SJ-FET is new generation of high voltage MOSFET family

that is utilizing an advanced charge balance mechanism for outstanding

low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction

loss, provide superior switching performance, and withstand

extreme dv/dt rate and higher avalanche energy.

• 650V @TJ = 150 ℃

• Typ. RDS(on) = 1.9Ω

• Ultra Low gate charge (typ. Qg = 7nC)

• 100% avalanche tested

SJ-FET is suitable for various AC/DC power conversion in

switching mode operation for higher efficiency.

TSD60R2K3S1

TSU60R2K3S1

TO-252

TO-251

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Value

Unit

600

2.3*

1.4*

Drain Current

-Continuous (TC = 25℃)

-Continuous (TC = 100℃)

I_D

I_DM

V_GSS

E_AS

I_AR

Drain Current – Pulsed

(Note 1)

Gate-Source voltage

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current

(Note 1)

0.4

E_AR

Repetitive Avalanche Energy

0.06

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

V/ns

dvds/dt

Drain Source voltage slope (Vds=480V)

P_D

Power Dissipation (TC = 25℃)

22.5

-55 to +150

300

Operating and Storage Temperature

Range

Maximum Lead Temperature for Soldering

Purpose,1/8” from Case for 5 Seconds

T_J, T_STG

T_L

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

Value

5.6

Unit

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

℃/W

R_θCS

0.5

R_θJA

www.truesemi.com

Ver.B1

12 3 4 5 6 7...9

中文翻译

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