TSPF5400

更新时间： 2024-09-23 22:31:31

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
6页	88K
描述
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package

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中文翻译

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技术参数
数据手册

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TSPF5400 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	最大正向电压：	2.1 V
JESD-609代码：	e2	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	100 °C	最低工作温度：	-40 °C
峰值波长：	870 nm	最大反向电压：	5 V
半导体材料：	GaAlAs	光谱带宽：	5e-8 m
子类别：	Infrared LEDs	表面贴装：	NO
端子面层：	Tin/Silver (Sn/Ag)	视角：	48 deg
Base Number Matches：	1

TSPF5400 数据手册

TSPF5400

Vishay Telefunken

High Speed IR Emitting Diode in ø 5 mm (T–1 )

Package

Description

94 8390

TSPF5400 is a high speed infrared emitting diode in

GaAlAs on GaAlAs double hetero (DH) technology,

molded in a clear, untinted plastic package.

The new technology combines the high speed of DH–

GaAlAs with the efficiency of standard GaAlAs and the

low forward voltage of the standard GaAs technology.

Features

High modulation bandwidth (10 MHz)

Extra high radiant power and radiant intensity

Low forward voltage

Standard T–1 (ø 5 mm) package

Angle of half intensity ϕ = ± 24

Peak wavelength = 870 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or

high data transmission rate requirements.

TSPF5400 is ideal for the design of transmission systems and for carrier frequency based systems (e.g. ASK

/ FSK – coded, 450 kHz or 1.3 MHz).

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

Surge Forward Current

Power Dissipation

100

200

210

100

t = 100 s

FSM

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

–40...+100

260

K/W

amb

stg

5sec, 2 mm from case

thJA

350

Document Number 81038

Rev. 2, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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