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TSP840MR PDF预览

TSP840MR

更新时间: 2024-11-21 17:15:23
品牌 Logo 应用领域
信安 - TRUESEMI /
页数 文件大小 规格书
7页 780K
描述
TO-220

TSP840MR 数据手册

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TSP840MR/TSF840MR  
500V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Truesemi‘s  
• 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V  
• Low gate charge(typical 30nC)  
• High ruggedness  
• Fast switching  
• 100% avalanche tested  
• Improved dv/dt capability  
advanced planar stripe DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge  
topology.  
Absolute Maximum Ratings  
TJ=25unless otherwise specified  
Symbol  
VDSS  
Parameter  
TSP840M  
TSF840M  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
500  
VGS  
±30  
V
TC = 25  
TC = 100℃  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 3)  
9.0  
5.4  
36  
9.0*  
5.4*  
36*  
A
ID  
Drain Current  
A
IDM  
EAS  
Pulsed Drain Current  
A
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
360  
13.9  
4.5  
mJ  
mJ  
V/ns  
W
EAR  
dv/dt  
139  
45.5  
0.36  
Power Dissipation (TC = 25)  
-Derate above 25℃  
PD  
TJ, TSTG  
TL  
1.11  
W/℃  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
300  
1/8” from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Resistance Characteristics  
Symbol  
Parameter  
TSP840M  
TSF840M  
Units  
/W  
/W  
/W  
RθJC  
Thermal Resistance,Junction-to-Case  
Thermal Resistance,Case-to-Sink Typ.  
0.90  
0.5  
2.75  
--  
RθCS  
RθJA  
Thermal Resistance,Junction-to-Ambient  
62.5  
62.5  
© 2018 Truesemi Semiconductor Corporation  
Ver.B1  
www.truesemi.com  

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