TSP60R460S1
600V 9.5A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.42Ω
• Ultra Low gate charge (typ. Qg = 35nC)
• 100% avalanche tested
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Value
600
Unit
V
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
9.5
6
ID
A
IDM
Drain Current – Pulsed
(Note 1)
30
A
VGSS
EAS
IAR
Gate-Source voltage
30
V
mJ
A
±
Single Pulsed Avalanche Energy (Note 2)
120
Avalanche Current
(Note 1)
(Note 1)
2
EAR
Repetitive Avalanche Energy
0.32
15
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
V/ns
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature
Range
83
1.67
W
W/℃
PD
TJ, TSTG
TL
-55 to +150
300
℃
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
℃
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Value
1.5
Unit
℃/W
℃/W
℃/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
RθCS
0.5
RθJA
62
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Ver.B1
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