TSP50R240S1
500V 18A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
• 550V @TJ = 150 ℃
• Typ. RDS(on) = 0.21Ω
• Ultra Low gate charge (typ. Qg = 43nC)
• 100% avalanche tested
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Value
Unit
V
500
18*
11*
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
ID
A
IDM
Drain Current – Pulsed
(Note 1)
55*
A
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
30
284
2.4
V
mJ
A
±
(Note 1)
(Note 1)
EAR
Repetitive Avalanche Energy
0.43
15
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
V/ns
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
104
-55 to +150
300
W
℃
℃
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
Value
1.2
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
℃/W
℃/W
℃/W
RθCS
0.5
RθJA
62
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