Datasheet > TSP4N60M

TSP4N60M

更新时间： 2024-05-23 22:23:06

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信安 - TRUESEMI		/
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TO-220

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TSP4N60M 数据手册

TSP4N60M/TSF4N60M

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

• 4.0A,600V,Max.R_DS(on)=2.5 Ω @ V_GS=10V

• Low gate charge(typical 16nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

TSP4N60M

TSF4N60M

Symbol

V_DSS

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

600

V_GS

± 30

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

(Note 3)

4.0

2.4

4.0*

2.4*

16*

I_D

Drain Current

I_DM

E_AS

Pulsed Drain Current

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

160

E_AR

dv/dt

4.5

100

0.8

Power Dissipation (T_C= 25℃)

-Derate above 25℃

P_D

T_J, T_STG

T_L

W/℃

℃

0.26

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

℃

300

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

TSP4N60M

TSF4N60M

3.79

Symbol

Parameter

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

Thermal Resistance,Case-to-Sink Typ.

1.25

0.5

R_θCS

R_θJA

Thermal Resistance,Junction-to-Ambient

62.5

℃/W

Ver.C1

www.truesemi.com

12 3 4 5 6 7...9

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