Datasheet > TSP15N06A

TSP15N06A

更新时间： 2024-04-09 19:03:19

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子栅
页数	文件大小	规格书
7页	497K
描述
通过采用最先进的沟槽栅工艺技术和完美的结构设计，紫光微电子的MOSFET实现功率密度最大化，从而大幅度降低电流传导过程中的导通功率损耗。同时，电流在芯片元胞当中的流通会更加均匀稳定，其有效

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TSP15N06A 数据手册

TSP15N06A

Wuxi Unigroup Microelectronics Co.,Ltd.

60V N-Channel DTMOS

Product Summary

General Description

60V

 Trench Power SGT technology

 Very low on-resistance R_DS(ON)

 Low Gate Charge

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

180A

< 3mΩ

 Excellent Gate Charge x R_DS(ON)Product

100% UIS Tested

Applications

 High Frequency Switching and Synchronous Rectification

TO-220

Device

Package

Form

Marking

P15N06A

TSP15N06A

TO-220

Tube

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

180

T_C= 25ºC

Continuous Drain Current

I_D

T_C= 100ºC

108

Pulsed Drain Current

I_DM

I_AS

720

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

E_AS

609

ºC

T_C=25ºC

208

Power Dissipation

P_D

T_C=100ºC

125

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 175

Thermal Resistance

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Case

Steady-State

R_thJC

R_thJA

0.6

ºC/W

Maximum Junction-to-Ambient

V1.0

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