TSML1000

更新时间： 2024-09-22 21:55:35

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
10页	482K
描述
Extented Power IR Emitting Diode in SMD Package

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中文翻译

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数据手册

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TSML1000 数据手册

TSML1000/1020/1030/1040

VISHAY

Vishay Semiconductors

Extented Power IR Emitting Diode in SMD Package

Description

TSML1000 series are high efficiency infrared emitting

TSML1000

TSML1020

diodes in GaAlAs on GaAs technology molded in

clear SMD package.

TSML1030

This technology represents best performance for radi-

ant power under pulse conditions, forward voltage

and reliability.

TSML1040

Features

• Outstanding high radiant power

• Low forward voltage

• Suitable for high pulse current operation

• Angle of half intensity ϕ = 12°

• Peak wavelength λ_p= 950 nm

• High reliability

• Matched Phototransistor series: TEMT1000

• Versatile terminal configurations

Applications

For remote control

Photointerrupters

Punched tape readers

Encoder

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

Reverse Voltage

Forward Current

100

200

Peak Forward Current

Surge Forward Current

Power Dissipation

t /T = 0.5, t = 100 µs

t = 100 µs

1.0

FSM

190

°C

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

100

- 40 to + 85

- 40 to + 100

<260

°C

amb

°C

stg

t ≤ 5sec

°C

400

°C

thJA

Basic Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Min

Typ.

1.2

Max

1.5

Unit

Forward Voltage

I = 20 mA, t = 20 ms

I = 1 A, t = 100 µs

2.6

mV/K

µA

Temp. Coefficient of V

Reverse Current

I = 1 mA

- 1.85

= 5 V

Junction Capacitance

Radiant Intensity

= 0 V, f = 1 MHz, E = 0

I = 20 mA, t = 20 ms

mW/sr

Document Number 81033

Rev. 6, 21-May-03

www.vishay.com

12 3 4 5 6 7...10

中文翻译

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