TSMF1000

更新时间： 2024-02-14 05:53:23

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
4页	42K
描述
High Speed IR Emitting Diode in ?SMD Package

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中文翻译

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技术参数
数据手册

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TSMF1000 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.72
Is Samacsys：	N	最大正向电流：	0.1 A
最大正向电压：	2.4 V	JESD-609代码：	e0
安装特点：	SURFACE MOUNT	最高工作温度：	85 °C
最低工作温度：	-40 °C	峰值波长：	870 nm
最长响应时间：	3e-8 s	最大反向电压：	5 V
半导体材料：	GaAlAs/GaAs/GaAlA	光谱带宽：	4e-8 m
子类别：	Infrared LEDs	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	视角：	17 deg
Base Number Matches：	1

TSMF1000 数据手册

TSMF1000

Vishay Telefunken

High Speed IR Emitting Diode in ø SMD Package

Description

TSMF1000 is a high efficiency infrared emitting diode

in GaAlAs on GaAs technology molded in clear SMD

package

In comparison with the standard GaAs on GaAs

technology these emitters achieve about 100 %

radiant power improvement at a similar wavelength.

The forward voltages at low current and at high pulse

current roughly correspond to the low values of the

standard technology. Therefore these emitters are

ideally suitable as high performance replacements of

standard emitters.

15 969

Features

Extra high radiant power

Low forward voltage

Suitable for high pulse current operation

Angle of half intensity ϕ = ± 17

Peak wavelength = 870 nm

High reliability

Good spectral matching to Si photodetectors

Applications

IrDA compatible

Free air transmission systems

For control and drive circuits

Photointerrupters

Punched tape readers

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

1.0

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–40...+85

260

amb

stg

5sec, 2 mm from case

Document Number 81061

Rev. 4, 31-Mar-00

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

12 3 4

中文翻译

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