Datasheet > TSM2N60_07

TSM2N60_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
8页	458K
描述
600V N-Channel Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TSM2N60_07 数据手册

TSM2N60

600V N-Channel Power MOSFET

TO-220

TO-251

(IPAK)

TO-252

(DPAK)

Pin Definition:

1. Gate

PRODUCT SUMMARY

2. Drain

3. Source

V_DS(V)

R_DS(on)(Ω)

I_D(A)

600

4.4 @ V_GS=10V

General Description

The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast

recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM

motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe

operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

Block Diagram

●

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

Ordering Information

Part No.

Package

Packing

2.5Kpcs/ 13” Reel

80pcs / Tube

TSM2N60CP RO

TSM2N60CH C5

TSM2N60CZ C0

TO-252

TO-251

TO-220

50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

600

±30

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

I_S

Continuous Source Current (Diode Conduction)^a,b

Single Pulse Drain to Source Avalanche Energy

(V_DD= 100V, V_GS=10V, I_AS=2A, L=10mH, R_G=25Ω)

EAS

P_D

TO-251 / TO-252

TO-220

2.5

Maximum Power Dissipation @Ta = 25^oC

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 to +150

1/8

Version: A07

12 3 4 5 6 7 8

下载PDF

与TSM2N60_07相关器件

型号	品牌	描述	获取价格	数据表
TSM2N60_1	TSC	N-Channel Power Enhancement Mode MOSFET	获取价格
TSM2N60_11	TSC	600V N-Channel Power MOSFET	获取价格
TSM2N60CH	TSC	N CHANNEL POWER ENHANCEMENT MODE MOSFET	获取价格
TSM2N60CHC5	TSC	600V N-Channel Power MOSFET	获取价格
TSM2N60CP	TSC	N CHANNEL POWER ENHANCEMENT MODE MOSFET	获取价格
TSM2N60CPRO	TSC	600V N-Channel Power MOSFET	获取价格