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TSK9N90M PDF预览

TSK9N90M

更新时间: 2024-09-16 17:15:43
品牌 Logo 应用领域
信安 - TRUESEMI /
页数 文件大小 规格书
7页 350K
描述
TO-247

TSK9N90M 数据手册

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TSK9N90M  
900V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Truesemi‘s  
• 9.0A,900V,Max.RDS(on)=1.40Ω @ VGS =10V  
• Low gate charge(typical 52nC)  
• High ruggedness  
• Fast switching  
• 100% avalanche tested  
• Improved dv/dt capability  
advanced planar stripe DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge  
topology.  
TO-247  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
VDSS  
Parameter  
Value  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
900  
VGS  
30  
V
±
TC = 25  
TC = 100℃  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 3)  
9.0  
A
ID  
Drain Current  
5.7  
36  
A
IDM  
EAS  
Pulsed Drain Current  
A
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25)  
900  
mJ  
mJ  
V/ns  
W
EAR  
28  
dv/dt  
PD  
4.0  
130  
TJ, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
TL  
300  
1/8” from case for 5 seconds  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
/W  
/W  
/W  
RθJC  
Thermal Resistance,Junction-to-Case  
--  
0.24  
--  
0.45  
Thermal Resistance,Case-to-Sink Typ.  
Thermal Resistance,Junction-to-Ambient  
--  
RθCS  
RθJA  
40  
© 2015 Truesemi Semiconductor Corporation  
Ver.B1  
www.truesemi.com  

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