Datasheet > TSHA6200_08

TSHA6200_08

更新时间： 2024-01-17 12:27:29

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	122K
描述
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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TSHA6200_08 数据手册

TSHA6200, TSHA6201, TSHA6202, TSHA6203

Vishay Semiconductors

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: λ_p= 875 nm

• High reliability

• Angle of half intensity: ϕ = 12ꢀ

• Low forward voltage

• Suitable for high pulse current operation

94 8389

• Good spectral matching with Si photodetectors

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

APPLICATIONS

• Infrared remote control and free air data transmission

systems

The TSHA620. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

• This emitter series is dedicated to systems with panes in

transmission space between emitter and detector,

because of the low absorbtion of 875 nm radiation in glass

PRODUCT SUMMARY

COMPONENT

TSHA6200

TSHA6201

TSHA6202

TSHA6203

I_e(mW/sr)

ϕ (deg)

_P(nm)

875

t_r(ns)

600

875

600

875

600

875

600

Note

Test conditions see table “Basic Characteristics“

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA6200

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6201

TSHA6202

TSHA6203

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

I_F

Forward current

100

200

2.5

180

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

I_FM

I_FSM

P_V

Document Number: 81021

Rev. 1.6, 05-Sep-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

161

12 3 4 5 6

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TSHA6201-ES12	VISHAY	获取价格	Infrared LED, 875nm
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