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TSHA620

更新时间: 2024-01-14 11:31:05
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 90K
描述
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package

TSHA620 数据手册

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TSHA620.  
Vishay Telefunken  
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 )  
Package  
94 8389  
Description  
The TSHA620. series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs  
technology these high intensity emitters feature about  
70 % radiant power improvement.  
In contrast to the TSHA520. series lead stand–offs are  
omitted.  
Features  
Extra high radiant power and radiant intensity  
Suitable for high pulse current operation  
Standard T–1 (ø 5 mm) package  
Leads formed without stand–off  
Angle of half intensity ϕ = ± 12  
Peak wavelength = 875 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control and free air transmission systems with high power and long transmission distance re-  
quirements in combination with PIN photodiodes or phototransistors.  
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also  
suitable for systems with panes in the transmission range between emitter and detector.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
2.5  
210  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
350  
thJA  
Document Number 81021  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

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