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TSHA4401-ASZ PDF预览

TSHA4401-ASZ

更新时间: 2024-11-19 13:14:59
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
5页 86K
描述
Infrared LED, 875nm

TSHA4401-ASZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.67最大正向电流:0.1 A
最大正向电压:1.8 VJESD-609代码:e3
安装特点:THROUGH HOLE MOUNT最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:INFRARED LED
峰值波长:875 nm最长响应时间:6e-7 s
最大反向电压:5 V半导体材料:GaAlAs
子类别:Infrared LEDs表面贴装:NO
端子面层:Matte Tin (Sn)视角:40 deg
Base Number Matches:1

TSHA4401-ASZ 数据手册

 浏览型号TSHA4401-ASZ的Datasheet PDF文件第2页浏览型号TSHA4401-ASZ的Datasheet PDF文件第3页浏览型号TSHA4401-ASZ的Datasheet PDF文件第4页浏览型号TSHA4401-ASZ的Datasheet PDF文件第5页 
TSHA440.  
Vishay Telefunken  
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)  
Package  
94 8398  
Description  
The TSHA44..series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs  
technology these high intensity emitters feature about  
50 % radiant power improvement.  
Features  
Extra high radiant power  
High radiant intensity for long transmission dis-  
tance  
Suitable for high pulse current operation  
Standard T–1(ø 3 mm) package for low space  
application  
Angle of half intensity ϕ = ± 20  
Peak wavelength = 875 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control and free air transmission systems with high power requirements in combination with PIN  
photodiodes or phototransistors.  
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also  
suitable for systems with panes in the transmission range between emitter and detector.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
2
180  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
450  
thJA  
Document Number 81017  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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