5秒后页面跳转
TSHA4401-AS21 PDF预览

TSHA4401-AS21

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY 半导体
页数 文件大小 规格书
7页 114K
描述
Infrared LED, 875nm

TSHA4401-AS21 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.67
最大正向电流:0.1 A最大正向电压:1.8 V
安装特点:THROUGH HOLE MOUNT最高工作温度:100 °C
最低工作温度:-55 °C峰值波长:875 nm
最长响应时间:6e-7 s最大反向电压:5 V
半导体材料:GaAlAs子类别:Infrared LEDs
表面贴装:NO视角:40 deg
Base Number Matches:1

TSHA4401-AS21 数据手册

 浏览型号TSHA4401-AS21的Datasheet PDF文件第2页浏览型号TSHA4401-AS21的Datasheet PDF文件第3页浏览型号TSHA4401-AS21的Datasheet PDF文件第4页浏览型号TSHA4401-AS21的Datasheet PDF文件第5页浏览型号TSHA4401-AS21的Datasheet PDF文件第6页浏览型号TSHA4401-AS21的Datasheet PDF文件第7页 
TSHA440.  
Vishay Semiconductors  
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double  
Hetero  
Description  
The TSHA44..series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs tech-  
nology these high intensity emitters feature about  
50 % radiant power improvement.  
94 8398  
Features  
• Extra high radiant power  
• High radiant intensity for long transmis-  
sion distance  
• Suitable for high pulse current operation  
e2  
Applications  
• Infrared remote control and free air transmission  
systems with high power requirements in combi-  
nation with PIN photodiodes or phototransistors.  
• Standard T-1(3 mm) package for low space  
application  
• Angle of half intensity ϕ = 20ꢀ  
• Peak wavelength λ = 875 nm  
• High reliability  
• Good spectral matching to Si photodetectors  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
• Because of the very low radiance absorption in  
glass at the wavelength of 875 nm, this emitter  
series is also suitable for systems with panes in  
the transmission range between emitter and  
detector.  
p
Absolute Maximum Ratings  
Tamb = 25 ꢀC, unless otherwise specified  
Parameter  
Reverse voltage  
Test condition  
Symbol  
VR  
Value  
5
Unit  
V
Forward current  
IF  
IFM  
IFSM  
PV  
100  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
200  
2
180  
mW  
ꢀC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tj  
100  
Tamb  
Tstg  
Tsd  
- 55 to + 100  
- 55 to + 100  
260  
ꢀC  
ꢀC  
t 5 sec, 2 mm from case  
ꢀC  
Thermal resistance junction/  
ambient  
RthJA  
450  
K/W  
Document Number 81017  
Rev. 1.5, 23-Feb-07  
www.vishay.com  
1

与TSHA4401-AS21相关器件

型号 品牌 获取价格 描述 数据表
TSHA4401-ASZ VISHAY

获取价格

Infrared LED, 875nm
TSHA4401BT12 VISHAY

获取价格

Infrared LED, 3mm, 1-Element, 875nm
TSHA4401BT12Z VISHAY

获取价格

Infrared LED, 3mm, 1-Element, 875nm,
TSHA4401BT21 VISHAY

获取价格

Infrared LED, 3mm, 1-Element, 875nm,
TSHA4401-MSZ VISHAY

获取价格

Infrared LED, 875nm
TSHA520 VISHAY

获取价格

GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
TSHA5200 VISHAY

获取价格

GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
TSHA5200_08 VISHAY

获取价格

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA5200_09 VISHAY

获取价格

Infrared Emitting Diode, 875 nm, GaAlAs
TSHA5200AS12 VISHAY

获取价格

Infrared LED, 5mm, 1-Element, 875nm