Datasheet > TSHA4401-AS12Z

TSHA4401-AS12Z

更新时间： 2024-11-17 21:20:19

品牌	Logo	应用领域
威世 - VISHAY		光电
页数	文件大小	规格书
5页	109K
描述
Infrared LED, 3mm, 1-Element, 875nm, GREEN, PLASTIC PACKAGE-2

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技术参数
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TSHA4401-AS12Z 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	GREEN, PLASTIC PACKAGE-2	Reach Compliance Code：	not_compliant
HTS代码：	8541.40.20.00	风险等级：	5.56
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最大正向电流：	0.1 A	JESD-609代码：	e2
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-40 °C	光电设备类型：	INFRARED LED
标称输出功率：	24 mW	峰值波长：	875 nm
形状：	ROUND	尺寸：	3 mm
端子面层：	Tin/Copper (Sn/Cu)	Base Number Matches：	1

TSHA4401-AS12Z 数据手册

TSHA4400, TSHA4401

www.vishay.com

Vishay Semiconductors

Infrared Emitting Diode, 875 nm, GaAlAs

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): Ø 3

• Peak wavelength: _p= 875 nm

• High reliability

• Angle of half intensity:  = 20°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

94 8636

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared remote control and free air data transmission

systems with comfortable radiation angle

DESCRIPTION

The TSHA440. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

• This emitter series is dedicated to systems with panes in

transmission space between emitter and detector,

because of the low absorption of 875 nm radiation in glass

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)

_p(nm)

875

t_r(ns)

600

TSHA4400

TSHA4401

875

600

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA4400

Bulk

MOQ: 5000 pcs, 5000 pcs/bulk

T-1

TSHA4401

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

100

Forward current

I_F

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

t_p= 100 μs

I_FM

200

I_FSM

P_V

180

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

100

T_amb

T_stg

T_sd

-40 to +85

-40 to +100

260

°C

t  5 s, 2 mm from case

°C

J-STD-051, leads 7 mm, soldered on PCB

R_thJA

300

K/W

Rev. 1.8, 15-Sep-14

Document Number: 81017

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与TSHA4401-AS12Z相关器件

型号	品牌	获取价格	描述	数据表
TSHA4401-AS21	VISHAY	获取价格	Infrared LED, 875nm
TSHA4401-ASZ	VISHAY	获取价格	Infrared LED, 875nm
TSHA4401BT12	VISHAY	获取价格	Infrared LED, 3mm, 1-Element, 875nm
TSHA4401BT12Z	VISHAY	获取价格	Infrared LED, 3mm, 1-Element, 875nm,
TSHA4401BT21	VISHAY	获取价格	Infrared LED, 3mm, 1-Element, 875nm,
TSHA4401-MSZ	VISHAY	获取价格	Infrared LED, 875nm
TSHA520	VISHAY	获取价格	GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
TSHA5200	VISHAY	获取价格	GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
TSHA5200_08	VISHAY	获取价格	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
TSHA5200_09	VISHAY	获取价格	Infrared Emitting Diode, 875 nm, GaAlAs

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