TSHA4400, TSHA4401
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ꢀ0ꢁ
• Low forward voltage
• Suitable for high pulse current operation
94 8636
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS ꢀ00ꢀ/95/EC and WEEE ꢀ00ꢀ/96/EC
DESCRIPTION
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
The TSHA440. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
ꢀ0
λ
P (nm)
875
tr (ns)
600
TSHA4400
ꢀ0
30
TSHA4401
ꢀ0
875
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHA4400
Bulk
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
T-1
TSHA4401
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
100
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
ꢀ00
Surge forward current
Power dissipation
ꢀ
180
mW
ꢁC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
ꢀ60
ꢁC
ꢁC
t ≤ 5 s, ꢀ mm from case
ꢁC
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
RthJA
300
K/W
Note
Tamb = ꢀ5 ꢁC, unless otherwise specified
Document Number: 81017
Rev. 1.6, 16-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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