TSHA4400-ASZ

更新时间： 2024-02-11 00:51:21

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
5页	86K
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TSHA4400-ASZ 数据手册

TSHA440.

Vishay Telefunken

GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)

Package

94 8398

Description

The TSHA44..series are high efficiency infrared emit-

ting diodes in GaAlAs on GaAlAs technology, molded

in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs

technology these high intensity emitters feature about

50 % radiant power improvement.

Features

Extra high radiant power

High radiant intensity for long transmission dis-

tance

Suitable for high pulse current operation

Standard T–1(ø 3 mm) package for low space

application

Angle of half intensity ϕ = ± 20

Peak wavelength = 875 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared remote control and free air transmission systems with high power requirements in combination with PIN

photodiodes or phototransistors.

Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also

suitable for systems with panes in the transmission range between emitter and detector.

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

180

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

5sec, 2 mm from case

450

thJA

Document Number 81017

Rev. 2, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

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