Datasheet > TSF9N90M

TSF9N90M

更新时间： 2024-11-19 17:15:15

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
7页	927K
描述
TO-220F

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TSF9N90M 数据手册

TSF9N90M

900V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

• 9A,900V,Max.R_DS(on)=1.4 Ω @ V_GS=10V

• Low gate charge(typical 52nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Value

Symbol

V_DSS

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

900

V_GS

T_C= 25℃

I_D

Drain Current

T_C= 100℃

5.7*

I_DM

E_AS

Pulsed Drain Current

36*

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Repetitive avalanche current

Power Dissipation (T_C= 25℃)

(Note 2)

(Note 1)

900

E_AR

4.8

I_AR

P_D

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

Value

2.6

Symbol

Parameter

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

Thermal Resistance,Junction-to-Ambient

62.5

R_θJA

Ver.B1

www.truesemi.com

12 3 4 5 6 7

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