Datasheet > TSF4N60F

TSF4N60F

更新时间： 2024-09-25 17:15:19

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
7页	495K
描述
TO-220F

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TSF4N60F 数据手册

TSF4N60F

600V N-Channel MOSFET

preliminary

General Description

Features

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

• 4A,600V,Max.R_DS(on)=3.2 Ω @ V_GS=10V

• Low gate charge(typical 8.5nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

TO-220F

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

V_DSS

Parameter

Value

600

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 30

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

(Note 3)

I_D

Drain Current

2.5*

I_DM

E_AS

Pulsed Drain Current

16*

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

E_AR

3.5

dv/dt

4.5

Power Dissipation (T_C= 25℃)

-Derate above 25℃

P_D

T_J, T_STG

T_L

W/℃

℃

0.28

-55 to +150

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

℃

300

* Drain current limited by maximum junction temperature.

Thermal Resistance Characteristics

Symbol

Parameter

Typ

Max

3.6

Units

R_θJC

Thermal Resistance,Junction-to-Case

℃/W

Thermal Resistance,Junction-to-Ambient

62.5

℃/W

R_θJA

Ver.B1

www.truesemi.com

12 3 4 5 6 7

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