5秒后页面跳转
TSD965LCTB0 PDF预览

TSD965LCTB0

更新时间: 2024-11-17 22:31:27
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
4页 84K
描述
Low Vce(sat) NPN Transistor

TSD965LCTB0 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

TSD965LCTB0 数据手册

 浏览型号TSD965LCTB0的Datasheet PDF文件第2页浏览型号TSD965LCTB0的Datasheet PDF文件第3页浏览型号TSD965LCTB0的Datasheet PDF文件第4页 
TSD965L  
Low Vce(sat) NPN Transistor  
Pin assignment:  
BVCEO = 10V  
Ic = 5A  
VCE (SAT), = 0.23V(typ.) @Ic / Ib = 3A / 60mA  
1. Emitter  
2. Collector  
3. Base  
Features  
Ordering Information  
Low VCE (SAT).  
High current capability  
High allowable power dissipation  
Part No.  
Packing  
Bulk Pack  
Ammo Pack  
Package  
TO-92  
TSD965LCT B0  
TSD965LCT A3  
Structure  
Epitaxial planar type.  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
15V  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
10V  
7
DC  
5
Pulse  
9 (note 1)  
0.75 (note 2)  
+150  
Collector Power Dissipation  
PD  
TJ  
W
oC  
oC  
Operating Junction Temperature  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw = 350uS, Duty <= 2%  
TSTG  
- 55 to +150  
2. When a device is mounted on a glass epoxy board, Measuring 35mm x 30mm x 1mm  
Electrical Characteristics  
Ta = 25 oC unless otherwise noted  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Collector-Base Voltage  
IC = 100uA, IE = 0  
IC = 1mA, IB = 0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
15  
10  
7
--  
--  
--  
--  
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 10uA, IC = 0  
--  
--  
V
VCB = 15V, IE = 0  
VEB = 5V, IC = 0  
--  
--  
100  
100  
0.18  
0.35  
1.2  
--  
nA  
nA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
Collector-Emitter Saturation Voltage  
IC / IB = 1.5A / 30mA  
IC / IB = 3.0A / 60mA  
IC / IB = 1.5A / 30mA  
VCE = 2V, IC = 0.5A  
VCE = 2V, IC = 2.0A  
VCE = 2V, IC = 5.0A  
VCE = 6V, IC = 50mA,  
f = 100MHz  
VCE(SAT)  
VCE(SAT)  
VCE(SAT)  
hFE  
--  
--  
--  
0.23  
0.95  
--  
V
Base-Emitter Saturation Voltage  
DC Current Transfer Ratio  
--  
V
400  
390  
185  
--  
hFE  
--  
820  
--  
hFE  
--  
Transition Frequency  
Output Capacitance  
fT  
170  
--  
MHz  
pF  
VCB = 10V, f=1MHz  
Cob  
--  
25  
--  
Note : pulse test: pulse width <=380uS, duty cycle <=2%  
TSD965L  
1-4  
2003/12 rev. A  

与TSD965LCTB0相关器件

型号 品牌 获取价格 描述 数据表
TSD-967 PMI

获取价格

T1/CEPT DUAL CORE SMD ISOLATION TRANSFORMERS
TSD-968 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-974 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-975 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-979 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-980 PMI

获取价格

SWITCH MODE DC/DC POWER CONVERSION TRANSFORMERS
TSD-982 PMI

获取价格

T1/CEPT DUAL CORE SMD ISOLATION TRANSFORMERS
TSD-983 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-988 PMI

获取价格

OFF-LINE SWITCH MODE TRANSFORMERS
TSD-989 PMI

获取价格

SWITCH MODE DC/DC POWER CONVERSION TRANSFORMERS