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TSD70R750S1 PDF预览

TSD70R750S1

更新时间: 2024-11-21 17:15:11
品牌 Logo 应用领域
信安 - TRUESEMI /
页数 文件大小 规格书
9页 618K
描述
TO-252

TSD70R750S1 数据手册

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TSD70R750S1/TSU70R750S1  
700V 7A N-Channel SJ-MOSFET  
General Description  
Features  
Truesemi SJ-FET is new generation of high voltage MOSFET family  
that is utilizing an advanced charge balance mechanism for outstanding  
low on-resistance and lower gate charge performance.  
This advanced technology has been tailored to minimize conduction  
loss, provide superior switching performance, and withstand  
extreme dv/dt rate and higher avalanche energy.  
• 750V @TJ = 150  
• Typ. RDS(on) = 0.68Ω  
• Ultra Low gate charge (typ. Qg = 25nC)  
• 100% avalanche tested  
SJ-FET is suitable for various AC/DC power conversion in  
switching mode operation for higher efficiency.  
TSD70R750S1  
TSU70R750S1  
TO-252  
TO-251  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Value  
700  
Unit  
V
Drain Current  
-Continuous (TC = 25)  
-Continuous (TC = 100)  
7*  
4.4*  
ID  
A
IDM  
VGSS  
EAS  
IAR  
Drain Current Pulsed  
(Note 1)  
21  
A
V
Gate-Source voltage  
30  
±
Single Pulsed Avalanche Energy (Note 2)  
86  
mJ  
A
Avalanche Current  
(Note 1)  
(Note 1)  
1.7  
0.2  
EAR  
Repetitive Avalanche Energy  
mJ  
dv/dt  
Peak Diode Recovery dv/dt  
(Note 3)  
15  
63  
V/ns  
PD  
TJ, TSTG  
TL  
Power Dissipation (TC = 25)  
W
Operating and Storage Temperature  
Range  
-55 to +150  
300  
Maximum Lead Temperature for Soldering  
Purpose,1/8” from Case for 5 Seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
2.0  
Unit  
RθJC  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
/W  
/W  
/W  
RθCS  
0.5  
RθJA  
62  
www.truesemi.com  
Ver.B1  
© 2015 Truesemi Semiconductor Corporation  

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