Datasheet > TSD60R650S1

TSD60R650S1

更新时间： 2024-11-14 17:15:47

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
9页	798K
描述
TO-252

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TSD60R650S1 数据手册

TSD60R650S1/TSU60R650S1

600V 7A N-Channel SJ-MOSFET

General Description

Features

Truesemi SJ-FET is new generation of high voltage MOSFET family

that is utilizing an advanced charge balance mechanism for outstanding

low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction

loss, provide superior switching performance, and withstand

extreme dv/dt rate and higher avalanche energy.

• 650V @TJ = 150 ℃

• Typ. RDS(on) = 0.58Ω

• Ultra Low gate charge (typ. Qg = 25nC)

• 100% avalanche tested

SJ-FET is suitable for various AC/DC power conversion in

switching mode operation for higher efficiency.

TSD60R650S1

TSU60R650S1

TO-252

TO-251

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Value

600

Unit

Drain Current

-Continuous (TC = 25℃)

-Continuous (TC = 100℃)

4.6

I_D

I_DM

V_GSS

E_AS

I_AR

Drain Current – Pulsed

(Note 1)

Gate-Source voltage

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current

(Note 1)

1.7

0.2

E_AR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

V/ns

Power Dissipation (TC = 25℃)

-Derate above 25℃

Operating and Storage Temperature

Range

0.8

W/℃

P_D

T_J, T_STG

T_L

-55 to +150

300

℃

Maximum Lead Temperature for Soldering

Purpose,1/8” from Case for 5 Seconds

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

Value

2.0

Unit

℃/W

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

R_θCS

0.5

R_θJA

www.truesemi.com

Ver.B1

12 3 4 5 6 7...9

中文翻译

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