Datasheet > TSC143ENND03Q

TSC143ENND03Q

更新时间： 2024-01-11 16:06:16

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	165K
描述
Transistor

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中文翻译

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技术参数
数据手册

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TSC143ENND03Q 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

TSC143ENND03Q 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

TPC5658NND03 TRANSISTOR

DESCRIPTION

NPN Epitaxial Silicon Transistor

1. BASE

FEATURES

Excellent h_FElinearity

Complementary to TPA2029NND03

2. EMITTER

3. COLLECTOR

BACK

APPLICATION

General Purpose transistor

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: BQ,BR,BS

B E

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

-55-150

℃

P_C

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA,I_C=0

I_CBO

I_EBO

V_CB=60V,I_E=0

0.1

560

0.4

μA

Emitter cut-off current

V_EB=7V,I_C=0

DC current gain

h_FE(1)

V_CE(sat)

f_T

V_CE=6V,I_C=1mA

120

Collector-emitter saturation voltage

Transition frequency

I_C=50mA,I_B=5mA

V_CE=12V,I_C=2mA,f=100MHz

V_CB=12V,I_E=0,f=1MHz

180

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

C_ob

3.5

Rank

Range

Marking

120-270

180-390

270-560

12 3

中文翻译

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