Datasheet > TSC128D_11

TSC128D_11

更新时间： 2024-11-18 08:35:23

品牌	Logo	应用领域
TSC		晶体二极管晶体管高压
页数	文件大小	规格书
6页	193K
描述
High Voltage NPN Transistor with Diode

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中文翻译

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TSC128D_11 数据手册

TSC128D

High Voltage NPN Transistor with Diode

Pin Definition:

1. Base

2. Collector

3. Emitter

TO-220

TO-263

PRODUCT SUMMARY

(D²PAK)

BV_CEO

BV_CBO

I_C

400V

700V

V_CE(SAT)

1.5V @ I_C/ I_B= 4A / 1A

Features

Block Diagram

●

Build-in Free-wheeling Diode Makes Efficient Anti-

saturation Operation

●

No Need to Interest an hfe Value Because of Low

Variable Storage-time Spread Even Though Comer

Spirit Product.

●

Low Base Drive Requirement

Suitable for Half Bridge Light Ballast Application

Structure

●

Silicon Triple Diffused Type

NPN Silicon Transistor

Integrated Anti-parallel Collector-Emitter Diode

Ordering Information

Part No.

Package

Packing

50pcs / Tube

TSC128DCZ C0

TSC128DCM RN

TO-220

TO-263

800pcs / 13” Reel

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

V_CBO

V_CES

V_CEO

V_EBO

I_C

700

Collector-Emitter Voltage @ V_BE=0V

Collector-Emitter Voltage

Emitter-Base Voltage

700

400

Collector Current

Collector Peak Current (tp <5ms)

Base Current

I_CM

I_B

Base Peak Current (tp <5ms)

Power Total Dissipation @ Tc=25ºC

Maximum Operating Junction Temperature

Storage Temperature Range

I_BM

P_DTOT

T_J

^oC

+150

T_STG

-55 to +150

1/6

Version: B11

12 3 4 5 6

中文翻译

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