Datasheet > TSC114ENND03

TSC114ENND03

更新时间： 2024-11-19 21:19:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	317K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN

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数据手册

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TSC114ENND03 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	30	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
Base Number Matches：	1

TSC114ENND03 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate Transistors

TSC114ENND03 TRANSISTOR

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

TOP

DESCRIPTION

NPN Digital Transistor

FEATURES

1. IN

1) Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

2. GND

3. OUT

BACK

2) The bias resistors consist of thin-film resistors with complete isolation

to allow egative biasing of the input. They also have the advantage of

almost completely eliminating parasitic effects

3) Only the on/off conditions need to be set for operation, making device design easy.

APPLICATION

NPN Digital Transistor

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

MARKING: 24

equivalent circuit

Absolute maximum ratings (Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

V_IN

Limits

Unit

-10~40

I_O

Output current

I_C(MAX)

100

Power dissipation

Junction temperature

Storage temperature

150

℃

150

Tstg

-55~150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

V_CC=5V ,I_O=100μA

V_O=0.3V ,I_O=10 mA

I_O/I_I=10mA/0.5mA

V_I=5V

0.5

Input voltage

Output voltage

Input current

0.3

0.88

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V ,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

R₁

KΩ

R₂/R₁

f_T

0.8

1.2

250

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

B,Jul,2011

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