Datasheet > BAV70

BAV70

更新时间： 2024-01-11 22:43:58

品牌	Logo	应用领域
TSC		二极管开关
页数	文件大小	规格书
2页	160K
描述
225mW SMD Switching Diode

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技术参数
数据手册

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BAV70 技术参数

生命周期：	Active	零件包装代码：	SC-70
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAV70 数据手册

BAW56, BAV70, BAV99

225mW SMD Switching Diode

Small Signal Diode

SOT-23

Features

Fast switching speed, High conductance

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Min Max

Unit (inch)

Min Max

Dimensions

Mechanical Data

Case :SOT-23 small outline plastic package

2.80

1.20

0.30

1.80

2.25

0.90

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.043

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed:

Weight : 0.008gram (approximately)

0.550 REF

0.022 REF

BAW56

BAV70

BAV99

Ordering Information

Part No.

Packing

Package

SOT-23

BAXXX RF

3Kpcs / 7" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

225

Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

V^RRM

IFRM

450

200

Pulse Width=1 sec

0.5

Non-Repetitive Peak Forward

I^FSM

Surge Current

(Note 1)

Pulse Width=1 μsec

Thermal Resistance (Junction to Ambient) (Note 2)

Junction and Storage Temperature Range

RθJA

357

°C/W

°C

TJ, TSTG

-55 to + 150

Electrical Characteristics

Type Number

Symbol

Min

Max

Units

Reverse Breakdown Voltage

I_R=

V^(BR)

100μA

50mA

I_F=

1.00

1.25

2.50

1.5

Forward Voltage

V^F

I_F=

150mA

70V

V_R=

V_R=0V,

I^R

μA

Reverse Leakage Current

Junction Capacitance

f=1.0MHz

Trr

Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

6.0

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

Version : D09

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