Datasheet > TSBC0T100SS-255A

TSBC0T100SS-255A

更新时间： 2024-11-21 17:01:47

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扬杰 - YANGJIE		/
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描述
TSBC0T100SS-255A

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TSBC0T100SS-255A 数据手册

QⅢ-RD02-L-99A1

Wafer Datasheet

TSBC0T100S(A)S-255A

(1)

20A/100V , low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

3048µm

120mil

101.5mil

111.5mil

9.5 mil

Top Metal Pad Size (B)

Chip Size (C)

2586µm

2840µm

255µm

80 µm

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

3.15 mil

6 inch

Al/Ag

Top Side Metallization

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified)⁽²⁾

Parameter

Description

Min.

Typ.

Max.

Test Condition

V_BR

V_F

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

105

109

0.64

I_R=100µA

I_F=20A⁽³⁾

0.7

I_R

μA V_R=105V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in TO-220 packages. Actual performance may degrade when assembled.

YJ does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

电话：0514-80982389

传真：0514-80980189

Yangzhou Yangjie Electronics Technology Co.,Ltd.

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