Datasheet > TSBA2T045SS-310A

TSBA2T045SS-310A

更新时间： 2024-03-03 10:11:25

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扬杰 - YANGJIE		/
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描述
TSBA2T045SS-310A

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TSBA2T045SS-310A 数据手册

QⅢ-RD02-L-100A1

Wafer Datasheet

TSBA2T045S(A)S-310A

10A/45V⁽¹⁾, low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

2590 µm

102 mil

97mil

Top Metal Pad Size (B)

Chip Size (C)

2481 µm

2489µm

310 µm

80 µm

98mil

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

11.4 mil

3.15 mil

6 inch

Top Side Metallization TSBA2T045SS-310A Al/Ag

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified) ⁽²⁾

Parameter

Description

Min.

Typ.

Max.

Test Condition

V_BR

V_F

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

0.430

I_R=100µA

I_F=10A⁽³⁾

0.48

I_R

μA V_R=45V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in R-6 packages. Actual performance may degrade when assembled. YJ

does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

Yangzhou Yangjie Electronics Technology Co.,Ltd.

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