Datasheet > TSB94T100SS-255A

TSB94T100SS-255A

更新时间： 2024-11-19 17:02:11

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扬杰 - YANGJIE		/
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1页	251K
描述
TSB94T100SS-255A

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数据手册

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TSB94T100SS-255A 数据手册

QⅢ-RD02-L-89A1

Wafer Datasheet

TSB94T100S(A)S-255A

(1)

10A/100V , low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

2388 µm

94 mil

90mil

Top Metal Pad Size (B)

Chip Size (C)

2286µm

2311µm

240 µm

80 µm

91mil

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

9.5 mil

3.15 mil

6 inch

Top Side Metallization TSB94T100SS-255A Al/Ag

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified)⁽²⁾

Parameter

Description

Min.

Typ.

Max.

Test Condition

V_BR

V_F

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

105

109

0.69

I_R=100µA

I_F=15A⁽³⁾

0.71

I_R

μA V_R=102V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in DO-201 packages. Actual performance may degrade when assembled.

YJ does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

电话：0514-80982389

传真：0514-80980189

Yangzhou Yangjie Electronics Technology Co.,Ltd.

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