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TSB840M PDF预览

TSB840M

更新时间: 2024-10-01 17:15:31
品牌 Logo 应用领域
信安 - TRUESEMI /
页数 文件大小 规格书
7页 338K
描述
TO-263

TSB840M 数据手册

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TSB840M  
500V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Truesemi‘s  
• 9.0A,500V,Max.RDS(on)=0.80 Ω @ VGS =10V  
• Low gate charge(typical 30nC)  
• High ruggedness  
• Fast switching  
• 100% avalanche tested  
• Improved dv/dt capability  
advanced planar stripe DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge  
topology.  
D2-PAK ( TO-263 )  
Absolute Maximum Ratings  
TC=25unless otherwise specified  
Symbol  
VDSS  
Parameter  
Value  
500  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 30  
V
TC = 25  
TC = 100℃  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 3)  
9.0  
A
ID  
Drain Current  
5.4  
A
IDM  
EAS  
Pulsed Drain Current  
36  
A
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
360  
mJ  
mJ  
V/ns  
W
EAR  
13.9  
4.5  
dv/dt  
139  
Power Dissipation (TC = 25)  
-Derate above 25℃  
PD  
TJ, TSTG  
TL  
1.11  
-55 to +150  
W/℃  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering purposes,  
300  
1/8” from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Resistance Characteristics  
Symbol  
Parameter  
Typ  
Max  
0.90  
40  
Units  
/W  
/W  
/W  
RθJC  
Thermal Resistance,Junction-to-Case  
Thermal Resistance,Junction-to-Ambient*  
--  
--  
--  
RθJA  
RθJA  
Thermal Resistance,Junction-to-Ambient  
62.5  
© 2015 Truesemi Semiconductor Corporation  
Ver.B1  
www.truesemi.com  

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