Datasheet > TSB82S150SS-255A

TSB82S150SS-255A

更新时间： 2024-11-26 15:18:47

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扬杰 - YANGJIE		/
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描述
TSB82S150SS-255A

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TSB82S150SS-255A 数据手册

QⅢ-RD02-L-86A1

Wafer Datasheet

TSB82S150S(A)S-255A

(1)

10A/150V , low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

2082 µm

82 mil

77mil

Top Metal Pad Size (B)

Chip Size (C)

1950µm

2002µm

255 µm

80 µm

79mil

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

9.5 mil

3.15 mil

6 inch

AL/Ag

Top Side Metallization

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified)⁽²⁾

Parameter

Description

Min.

Typ. Max. Unit Test Condition

V_BR

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

155

170

0.8

0.5

I_R=100µA

I_F=10A⁽³⁾

V_R=150V

V_F

0.88

I_R

μA

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assume the dies are assembled in SMC packages. Actual performance may degrade when assembled. YJ

does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

电话:0514-80982389

传真:0514-80982389

Yangzhou Yangjie Electronics Technology Co.,Ltd.

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