Datasheet > TSB772SCY

TSB772SCY

更新时间： 2024-01-10 03:16:22

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	55K
描述
Low Vce(sat) PNP Transistor

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中文翻译

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技术参数
数据手册

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TSB772SCY 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

TSB772SCY 数据手册

TSB772S

Low Vce(sat) PNP Transistor

Pin assignment:

TO-92

1. Emitter

2. Collector

3. Base

BV_CEO= - 50V

Ic = - 3A

V_{CE (SAT)}, = - 0.3V(typ.) @Ic / Ib = - 2A / - 20mA

SOT-89

1. Base

2. Collector

3. Emitter

Features

Ordering Information

Low V_{CE (SAT).}

Part No.

TSB772SCT

TSB772SCY

Packing

Bulk Pack

Package

TO-92

SOT-89

Excellent DC current gain characteristics

Structure

Tape & Reel

Epitaxial planar type.

PNP silicon transistor

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

- 50V

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

- 50V

- 5

- 3

Pulse

TO-92

SOT-89

- 7 (note 1)

0.75

Collector Power Dissipation

P_D

0.50

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 350US, Duty <= 2%

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= - 50uA, I_E= 0

I_C= - 1mA, I_B= 0

I_E= - 50uA, I_C= 0

V_CB= - 40V, I_E= 0

V_EB= - 4V, I_C= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

- 50

- 5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

- 1

-1

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= - 2.0A / - 0.2A

V_CE= - 2V, I_C= - 1A

V_CE= - 5V, I_C= - 100mA,

f = 100MHz

V_CE(SAT)

h_FE

- 0.3

- 0.5

350

160

f_T

MHz

Output Capacitance

V_CB= - 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

TSB772S

1-3

2003/12 rev. C

12 3

中文翻译

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