Datasheet > TSB75T080SS-255A

TSB75T080SS-255A

更新时间： 2024-11-22 15:19:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
1页	250K
描述
TSB75T080SS-255A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TSB75T080SS-255A 数据手册

QⅢ-RD02-L-83A1

Wafer Datasheet

TSB75T080S(A)S-255A

5A/80V, low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

1905 µm

75 mil

71mil

Top Metal Pad Size (B)

Chip Size (C)

1812µm

1825µm

255 µm

80 µm

72mil

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

9.5 mil

3.15 mil

6 inch

Top Side Metallization TSB75T080SS-255A Al/Ag

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified)⁽¹⁾

Parameter

Description

Min.

Typ.

Max.

Test Condition

V_BR

V_F

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

0.52

I_R=100µA

I_F=5A⁽³⁾

0.54

I_R

μA V_R=80V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in SMB packages. Actual performance may degrade when assembled. YJ

does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

电话：0514-80982389

传真：0514-80980189

Yangzhou Yangjie Electronics Technology Co.,Ltd.

中文翻译

下载PDF

与TSB75T080SS-255A相关器件

型号	品牌	获取价格	描述	数据表
TSB75T100SS-255A	YANGJIE	获取价格	TSB75T100SS-255A
TSB75T100SS-255B	YANGJIE	获取价格	TSB75T100SS-255B
TSB772	TSC	获取价格	Low Vce(sat) PNP Transistor
TSB772_07	TSC	获取价格	Low Vcesat PNP Transistor
TSB772_11	TSC	获取价格	Low Vcesat PNP Transistor
TSB772_13	TSC	获取价格	Low Vcesat PNP Transistor
TSB772CK	TSC	获取价格	Low Vce(sat) PNP Transistor
TSB772CKB0	TSC	获取价格	Low Vcesat PNP Transistor
TSB772CKB0G	TSC	获取价格	Low Vcesat PNP Transistor
TSB772CKC0G	TSC	获取价格	Low Vcesat PNP Transistor