Datasheet > TSB60R190S1

TSB60R190S1

更新时间： 2024-11-28 17:15:31

品牌	Logo	应用领域
信安 - TRUESEMI		/
页数	文件大小	规格书
9页	1171K
描述
TO-263

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数据手册

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TSB60R190S1 数据手册

TSB60R190S1

600V 20A N-Channel SJ-MOSFET

Features

General Description

• 650V @TJ = 150 ℃

• Typ. RDS(on) = 0.16Ω

• Ultra Low gate charge (typ. Qg = 70nC)

• 100% avalanche tested

Truesemi SJ-FET is new generation of high voltage MOSFET family

that is utilizing an advanced charge balance mechanism for outstanding

low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction

loss, provide superior switching performance, and withstand

extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in

switching mode operation for higher efficiency.

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Value

600

Unit

Drain Current

-Continuous (TC = 25℃)

-Continuous (TC = 100℃)

20*

12.6*

I_D

I_DM

Drain Current – Pulsed

(Note 1)

62*

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy (Note 2)

485

Avalanche Current

(Note 1)

3.5

E_AR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

V/ns

Power Dissipation (TC = 25℃)

-Derate above 25℃

Operating and Storage Temperature

151

1.67

P_D

T_J, T_STG

T_L

℃

-55 to +150

300

Range

Maximum Lead Temperature for Soldering

Purpose,1/8” from Case for 5 Seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

Value

0.83

0.5

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

℃/W

R_θCS

R_θJA

℃/W

www.truesemi.com

Ver.B1

12 3 4 5 6 7...9

中文翻译

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