Datasheet > TSB58T100SS-255B

TSB58T100SS-255B

更新时间： 2024-04-09 19:02:38

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扬杰 - YANGJIE		/
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描述
TSB58T100SS-255B

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TSB58T100SS-255B 数据手册

QⅢ-RD02-L-85A1

Wafer Datasheet

TSB58T100S(A)S-255B

(1)

3A/100V , low VF Schottky barrier diode with trench MOS structure

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

1473 µm

58 mil

54mil

Top Metal Pad Size (B)

Chip Size (C)

1379µm

1393µm

255 µm

80 µm

55mil

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

9.5 mil

3.15 mil

6 inch

Top Side Metallization TSB58T100SS-255B Al/Ag

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified)⁽²⁾

Parameter

Description

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Min.

Typ.

Max.

Test Condition

V_BR

V_F

105

111

0.560

0.675

I_R=100µA

I_F=3A⁽³⁾

I_F=5A⁽³⁾

0.590

0.720

I_R

Reverse Leakage Current

μA V_R=105V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in SMA packages. Actual performance may degrade when assembled. YJ

does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

电话：0514-80982389

传真：0514-80980189

Yangzhou Yangjie Electronics Technology Co.,Ltd.

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