Datasheet > TSB1412_11

TSB1412_11

更新时间： 2024-11-24 12:20:27

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	249K
描述
Low Vcesat PNP Transistor

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中文翻译

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数据手册

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TSB1412_11 数据手册

TSB1412

Low Vcesat PNP Transistor

TO-252

(DPAK)

Pin Definition:

1. Base

2. Collector

3. Emitter

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

-40V

-30V

-5A

V_CE(SAT)

-0.5V @ I_C/ I_B= -4A / -100mA

Features

Ordering Information

●

Low V_CE(SAT)-0.36 @ I_C/ I_B= -4A / -100mA (Typ.)

Complementary part with TSD2118

Part No.

Package

Packing

●

TSB1412CP RO

TSB1412CP ROG

TO-252

2.5Kpcs / 13” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

Note: “G” is denote Halogen Free Product.

●

Absolute Maximum Rating (T_A=25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-40

-30

-6

-5

-10 (note)

Collector Current

I_C

Pulse

Ta=25ºC

Tc=25ºC

Collector Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_STG

- 55 to +150

Note: Single pulse, Pw=10ms

Electrical Specifications (T_A=25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -50uA, I_E= 0

-40

-30

-6

Collector-Emitter Breakdown Voltage I_C= -1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -50uA, I_C= 0

V_CB= -25V, I_E= 0

V_EB= -5V, I_C= 0

-0.5

390

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= -4A / -100mA

V_CE= -2V, I_C= -500mA

V_CE=-6V, I_C=-50mA,

f=30MHz

*V_CE(SAT)

*h_FE

-0.36

180

Transition Frequency

Output Capacitance

f_T

120

MHz

V_CB= -20V, f=1MHz

Cob

* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/4

Version: B11

12 3 4

中文翻译

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