Datasheet > TSB1386CY

TSB1386CY

更新时间： 2024-11-08 22:41:59

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	117K
描述
Low Frequency PNP Transistor

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中文翻译

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数据手册

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TSB1386CY 数据手册

TSB1386

Low Frequency PNP Transistor

BV_CEO= - 20V

Ic = - 5A

Pin assignment:

1. Base

V_{CE (SAT)}, = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A

2. Collector

3. Emitter

Features

Ordering Information

Low V_{CE (SAT).}

Part No.

TSB1386CP

TSB1386CY

Packing

Package

TO-252

Excellent DC current gain characteristics

Tape & Reel

Structure

SOT-89

Epitaxial planar type.

PNP silicon transistor

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

- 30V

- 20V

- 6

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

- 5

Pulse

TO-252

SOT-89

- 10

Collector Power Dissipation

P_D

0.5

Operating Junction Temperature

T_J

+150

- 55 to +150

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 10mS, Duty <= 50%

T_STG

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= - 50uA

I_C= - 1mA

BV_CBO

BV_CEO

BV_EBO

I_CBO

- 30

- 20

- 6

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= - 50uA

V_CB= - 20V

- 0.5

-0.5

- 1.0

390

Emitter Cutoff Current

V_EB= - 5V

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= - 4A / - 0.1A

V_CE= - 2V, I_C= - 0.5A

V_CE= - 6V, I_E= - 50mA,

f = 30MHz

V_CE(SAT)

h_FE

f_T

120

MHz

Output Capacitance

V_CB= - 5V, I_E=0A,f=1MHz

Cob

Note : pulse test: pulse width <=350uS, duty cycle <=2%

Classification Of h_FE

Rank

Range

82 - 180

120 - 270

180 - 390

TSB1386

1-4

2003/12 rev. A

12 3 4

中文翻译

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